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CEP02N6

Chino-Excel Technology
Part Number CEP02N6
Manufacturer Chino-Excel Technology
Description N-channel Enhancement Mode Field Effect Transistor
Published Oct 14, 2005
Detailed Description CEP02N6/CEB02N6 Sep. 2002 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 2A , RDS(ON...
Datasheet PDF File CEP02N6 PDF File

CEP02N6
CEP02N6

Overview
CEP02N6/CEB02N6 Sep.
2002 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 2A , RDS(ON)=5Ω @VGS=10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D G D G G D S S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 600 Unit V V A A A W W/ C C Ć 30 2 6 6 60 0.
48 -55 to 150 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 4-2 RįJC RӰJA 2.
1 62.
5 C/W C/W CEP02N6/CEB02N6 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Single Pluse Avalanche Energy c Avalanche Current Repetitive Avalanche Energy Symbol a Condition Min Typ Max Unit 125 2 5.
4 mJ A mJ 4 DRAIN-SOURCE AVALANCHE RATING IAR EAS EAR VGS = 0V,ID = 250µA VDS = 600V, VGS = 0V VGS = Ć30V, VDS = 0V VDS = VGS, ID = 250µA VGS =10V, ID = 1A VGS = 10V, VDS = 10V VDS = 50V, ID = 1A VDD = 300V, ID = 2A, VGS = 10V RGEN=18Ω 2 2 600 OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS b V 25 µA Ć100 nA 4 3.
8 5.
0 V Ω A 1.
2 18 18 50 16 20 35 35 90 40 25 S ns ns ns ns nC nC nC ON CHARACTERISTICS a Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDS =480V, ID = 2A, VGS =10V 4-3 2 12 CEP02N6/CEB02N6 4 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter DYNAMIC CHARACTERISTICS b Input Capa...


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