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1SS108

Part Number 1SS108
Manufacturer Hitachi Semiconductor
Description Silicon Schottky Barrier Diode
Published Mar 23, 2005
Detailed Description 1SS108 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-154A (Z) Rev. 1 Features • Det...
Datasheet 1SS108




Overview
1SS108 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-154A (Z) Rev.
1 Features • Detection efficiency is very good.
• Small temperature coefficient.
• High reliability with glass seal.
Ordering Information Type No.
1SS108 Cathode White 2nd band Black Mark H Package Code DO-35 Outline H 1 2nd band Cathode band 2 1.
Cathode 2.
Anode 1SS108 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 30 15 125 –55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Forward current Reverse current Capacitance Rectifier efficiency ESD-Capability Sy...






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