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1SS106

SEMTECH
Part Number 1SS106
Manufacturer SEMTECH
Description SILICON SCHOTTKY BARRIER DIODE
Published Jun 16, 2016
Detailed Description 1SS106 SILICON SCHOTTKY BARRIER DIODE for various detector, high speed switching Features • Detection efficiency is very...
Datasheet PDF File 1SS106 PDF File

1SS106
1SS106

Overview
1SS106 SILICON SCHOTTKY BARRIER DIODE for various detector, high speed switching Features • Detection efficiency is very good.
• Small temperature coefficient.
• High reliability with glass seal.
Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Average Forward Current Junction Temperature Storage Temperature Range Max.
0.
5 Max.
1.
9 Min.
27.
5 Black Cathode Band Black Part No.
Black "ST" Brand XXX ST Max.
3.
9 Min.
27.
5 Glass Case DO-35 Dimensions in mm Symbol VR IO TJ Tstg Value 10 30 125 - 55 to + 125 Unit V mA OC OC Electrical Characteristics at Ta = 25 OC Parameter Forward Current at VF = 1 V Reverse Current at VR = 6 V Capacitance at VR = 1 V, f = 1 MHz Rectifier Efficiency at Vin = 2 Vrms, f = 40 MHz, RL = 5 KΩ, CL = 20 pF ESD Capability 1) at C = 200 pF, both forward and reverse direction 1 pulse.
1) Failure criterion: IR ≥ 140 µA at VR = 6 V Symbol IF IR C η - Min.
4.
5 70 100 Max.
70 1.
5 - Unit mA µA pF % V SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/06/2007 ...


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