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1SS106

Renesas
Part Number 1SS106
Manufacturer Renesas
Description Silicon Schottky Barrier Diode
Published Jun 16, 2016
Detailed Description 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0125-0200Z (Previous: ADE-208-153...
Datasheet PDF File 1SS106 PDF File

1SS106
1SS106

Overview
1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0125-0200Z (Previous: ADE-208-153A) Rev.
2.
00 Oct.
23.
2003 Features • Detection efficiency is very good.
• Small temperature coefficient.
• High reliability with glass seal.
.
Ordering Information Type No.
1SS106 Cathode White 2nd band White Mark H Package Code DO-35 Pin Arrangement H 12 2nd band Cathode band 1.
Cathode 2.
Anode Rev.
2.
00, Oct.
23.
2003, page 1 of 4 1SS106 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 30 125 –55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward current Reverse current Capacitance ESD-Capability *1 IF IR C — 4.
5 — —— —— 100 — — mA VF = 1 V 70 µA VR = 6 V 1.
5 pF VR = 1 V, f = 1 MHz — V C = 200 pF, Both forward and reverse direction 1 pulse.
Note: 1.
Failure criterion; IR ≥ 140 µA at VR = 6 V Rev.
2.
00, Oct.
23.
2003, page 2 of 4 1SS106 Main Characteristics 10–1 10–2 Forward current IF (A) 10–3 10–4 10–5 0 0.
4 0.
8 1.
2 1.
6 2.
0 Forward voltage VF (V) Fig.
1 Forward current vs.
Forward voltage f = 1MHz 10 Reverse current IR (A) 10–2 10–3 10–4 10–5 10–6 0 2 4 6 8 10 Reverse voltage VR (V) Fig.
2 Reverse current vs.
Reverse voltage Capacitance C (pF) 1.
0 0.
1 0.
1 1.
0 10 Reverse voltage VR (V) Fig.
2 Capacitance vs.
Reverse voltage Rev.
2.
00, Oct.
23.
2003, page 3 of 4 1SS106 Package Dimensions 26.
0 Min 4.
2 Max 26.
0 Min As of January, 2003 Unit: mm φ 0.
5 φ 2.
0 Package Code JEDEC JEITA Mass (reference value) DO-35 Conforms Conforms 0.
13 g Rev.
2.
00, Oct.
23.
2003, page 4 of 4 Sales Strategic Planning Div.
Nippon Bldg.
, 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1.
Renesas Technology Corp.
puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibili...


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