Part Number
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PTVA042502FC |
Manufacturer
|
Infineon |
Description
|
Thermally-Enhanced High Power RF LDMOS FET |
Published
|
Jan 26, 2016 |
Detailed Description
|
PTVA042502EC PTVA042502FC
Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 – 806 MHz
Description
The PTVA04...
|
Datasheet
|
PTVA042502FC
|
Overview
PTVA042502EC PTVA042502FC
Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 – 806 MHz
Description
The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band.
Features include high gain and thermally-enhanced package with bolt-down or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
Efficiency (%), Gain (dB) IMD Shoulder (dBc)
DVB-T Performance Efficiancy, Gain and IMD3 Shoulder vs Frequency VDD = 50 V, IDQ = 800 mA, POUT = 55 W avg
35 -23
30 -25
Efficiency
25 -27
20 Gain -29
15 -31
IMDASChPoRulder
1...
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