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PTVA042502EC

Part Number	PTVA042502EC
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Jan 26, 2016
Detailed Description	PTVA042502EC PTVA042502FC Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 – 806 MHz Description The PTVA04...
Datasheet	PTVA042502EC PDF File

Overview

PTVA042502EC PTVA042502FC Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 – 806 MHz Description The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band.
Features include high gain and thermally-enhanced package with bolt-down or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
Efficiency (%), Gain (dB) IMD Shoulder (dBc) DVB-T Performance Efficiancy, Gain and IMD3 Shoulder vs Frequency VDD = 50 V, IDQ = 800 mA, POUT = 55 W avg 35 -23 30 -25 Efficiency 25 -27 20 Gain -29 15 -31 IMDASChPoRulder 10 ptva042502fc_g1 -33 450 500 550 600 650 700 750 800 850 Frequency (MHz) PTVA042502EC Package H-36248-4 PTVA042502FC Package H-37248-4 Features • Input matched • Integrated ESD protection • Human Body Model Class 1C (per ANSI/ ESDA/JEDEC JS-001) • Low thermal resistance • RoHS...

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