DatasheetsPDF.com

PTVA042502FC

Infineon
Part Number PTVA042502FC
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Published Jan 26, 2016
Detailed Description PTVA042502EC PTVA042502FC Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 – 806 MHz Description The PTVA04...
Datasheet PDF File PTVA042502FC PDF File

PTVA042502FC
PTVA042502FC

Overview
PTVA042502EC PTVA042502FC Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 – 806 MHz Description The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band.
Features include high gain and thermally-enhanced package with bolt-down or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
Efficiency (%), Gain (dB) IMD Shoulder (dBc) DVB-T Performance Efficiancy, Gain and IMD3 Shoulder vs Frequency VDD = 50 V, IDQ = 800 mA, POUT = 55 W avg 35 -23 30 -25 Efficiency 25 -27 20 Gain -29 15 -31 IMDASChPoRulder 1...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)