|
Part Number
|
1SS193 |
|
Manufacturer
|
Toshiba Semiconductor |
|
Description
|
Silicon Epitaxial Planar Type Diode |
|
Published
|
Mar 23, 2005 |
|
Detailed Description
|
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS193
Ultra High Speed Switching Application
AEC-Q101 Qualified (Note1)...
|
|
Datasheet
|
1SS193
|
Overview
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS193
Ultra High Speed Switching Application
AEC-Q101 Qualified (Note1)
Small package
: SC-59
Low forward voltage
: VF (3) = 0.
9V (typ.
)
Fast reverse recovery time : trr = 1.
6ns (typ.
)
Small total capacitance : CT = 0.
9pF (typ.
)
Note1: For detail information, please contact to our sales.
1SS193
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature range
VRM VR IFM IO IFSM P Tj Tstg
85
V
80
V
300
mA
100
mA
2
...
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