BLF640
Broadband power LDMOS
transistor
Rev.
2 — 11 April 2013
Product data sheet
1.
Product profile
1.
1 General description
10 W LDMOS power
transistor for applications at frequencies from HF to 2200 MHz
Table 1.
Typical performance IDq = 100 mA; Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
D
(MHz)
(V)
(W)
(dB)
(%)
2-carrier W-CDMA 2110 to 2170 28
0.
7 18.
5 15
1-carrier W-CDMA 2110 to 2170 28
2
19.
3 31
ACPR (dBc) 50 [1] 39 [1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz.
1.
2 Features and benefits
Easy power control Integrated ESD prot...