Part Number
|
1SV311 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
Diode |
Published
|
Mar 23, 2005 |
Detailed Description
|
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV311
1SV311
VCO for UHF Band Radio
• High capacitance ratio: C1 V/C4 V ...
|
Datasheet
|
1SV311
|
Overview
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV311
1SV311
VCO for UHF Band Radio
• High capacitance ratio: C1 V/C4 V = 2.
1 (typ.
) • Low series resistance: rs = 0.
28 Ω (typ.
) • Useful for small size tuner
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage Junction temperature Storage temperature range
VR 10 V
Tj 125 °C
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within...
Similar Datasheet