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1SV311

Toshiba Semiconductor
Part Number 1SV311
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SV311 1SV311 VCO for UHF Band Radio • High capacitance ratio: C1 V/C4 V ...
Datasheet PDF File 1SV311 PDF File

1SV311
1SV311

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SV311 1SV311 VCO for UHF Band Radio • High capacitance ratio: C1 V/C4 V = 2.
1 (typ.
) • Low series resistance: rs = 0.
28 Ω (typ.
) • Useful for small size tuner Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within...


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