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1SV302

Toshiba Semiconductor
Part Number 1SV302
Manufacturer Toshiba Semiconductor
Description Variable Capacitance Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV302 CATV Tuning · High capacitance ratio: C2 V/C25 ...
Datasheet PDF File 1SV302 PDF File

1SV302
1SV302

Overview
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV302 CATV Tuning · High capacitance ratio: C2 V/C25 V = 17.
5 (typ.
) · Low series resistance: rs = 1.
05 Ω (typ.
) · Useful for small size tuner.
Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Peak reverse voltage Junction temperature Storage temperature range Symbol VR VRM Tj Tstg Rating 30 35 (RL = 10 kW) 125 -55~125 Unit V V °C °C 1SV302 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance VR IR C2 V C25 V C2 V/C25 V rs IR = 1 mA VR = 28 V VR = 2 V, f = 1 MHz VR = 25 V, f = 1 ...


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