Part Number
|
1SV312 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
Diode |
Published
|
Mar 23, 2005 |
Detailed Description
|
TOSHIBA Diode Silicon Epitaxial Pin Type
1SV312
VHF~UHF Band RF Attenuator Applications
· Two independent diodes mounte...
|
Datasheet
|
1SV312
|
Overview
TOSHIBA Diode Silicon Epitaxial Pin Type
1SV312
VHF~UHF Band RF Attenuator Applications
· Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design.
· Low capacitance: CT = 0.
25 pF (typ.
) · Low series resistance: rs = 3 Ω (typ.
)
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage Forward current Junction temperature Storage temperature range
Symbol
VR IF Tj Tstg
Rating
50 50 125 -55~125
Unit
V mA °C °C
1SV312
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage Reverse current Forward voltage Total capacitance Series resistance
Symbol
VR IR VF CT rs
Test Condition
IR = 10 mA VR = 50 V IF ...
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