Part Number
|
1SV314 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
Diode |
Published
|
Mar 23, 2005 |
Detailed Description
|
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV314
1SV314
VCO for UHF Band Radio
z High Capacitance Ratio : C0.5 V / C...
|
Datasheet
|
1SV314
|
Overview
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV314
1SV314
VCO for UHF Band Radio
z High Capacitance Ratio : C0.
5 V / C2.
5 V = 2.
5 (Typ.
) z Low Series Resistance : rs = 0.
35 Ω (Typ.
) z Useful for Small Size Tuner
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage Junction Temperature Storage Temperature Range
VR 10 V
Tj 125 °C
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.
g.
the application of high
temperature/current/voltage and the significant change in
temperature, etc.
) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltag...
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