Part Number
|
1SV329 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
Silicon Diode |
Published
|
Mar 23, 2005 |
Detailed Description
|
1SV329
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV329
VCO for UHF Band Radio
· · · High capacitance ratio: C1 V/C4 ...
|
Datasheet
|
1SV329
|
Overview
1SV329
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV329
VCO for UHF Band Radio
· · · High capacitance ratio: C1 V/C4 V = 2.
8 (typ.
) Low series resistance: rs = 0.
55 Ω (typ.
) Useful for small size tuner.
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C
JEDEC JEITA TOSHIBA
― ― 1-1G1A
Electrical Characteristics (Ta = 25°C)
Characteristics Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance Symbol VR IR C1 V C4 V C1 V/C4 V rs I R = 1 mA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ¾ VR = 1 V, f = 470 MHz Test Condition
Weight...
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