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1SV329

Part Number 1SV329
Manufacturer Toshiba Semiconductor
Description Silicon Diode
Published Mar 23, 2005
Detailed Description 1SV329 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV329 VCO for UHF Band Radio · · · High capacitance ratio: C1 V/C4 ...
Datasheet 1SV329




Overview
1SV329 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV329 VCO for UHF Band Radio · · · High capacitance ratio: C1 V/C4 V = 2.
8 (typ.
) Low series resistance: rs = 0.
55 Ω (typ.
) Useful for small size tuner.
Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C JEDEC JEITA TOSHIBA ― ― 1-1G1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance Symbol VR IR C1 V C4 V C1 V/C4 V rs I R = 1 mA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ¾ VR = 1 V, f = 470 MHz Test Condition Weight...






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