NCE85H21C Datasheet

NCE85H21C N-Channel Enhancement Mode Power MOSFET

The NCE85H21C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features ● VDSS =85V,ID =210A RDS(ON) < 4mΩ @ VGS=10V ● Good stability and uniformity with high EAS.

Features

● VDSS =85V,ID =210A RDS(ON) < 4mΩ @ VGS=10V
● Good stability and uniformity with high EAS
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation Application
● Automotive applications
● Hard switched and high frequency circuits
● Uninterruptible power supply Schematic diagram Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package NCE85H21C N.