Part Number
|
MTB110P08KN3 |
Manufacturer
|
Cystech Electonics |
Description
|
P-Channel Enhancement Mode MOSFET |
Published
|
Feb 9, 2016 |
Detailed Description
|
CYStech Electronics Corp.
Spec. No. : C123N3 Issued Date : 2015.11.09
Revised Date : Page No. : 1/9
-80V P-Channel Enh...
|
Datasheet
|
MTB110P08KN3
|
Overview
CYStech Electronics Corp.
Spec.
No.
: C123N3 Issued Date : 2015.
11.
09
Revised Date : Page No.
: 1/9
-80V P-Channel Enhancement Mode MOSFET
MTB110P08KN3 BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-2A
RDSON@VGS=-4.
5V,ID=-1A
-80V -2.
2A
104mΩ(typ)
141mΩ(typ)
Features
• Low gate charge • Compact and low profile SOT-23 package • Advanced trench process technology • High density cell design for ultra low on resistance • ESD protected gate • Pb-free lead plating package
Symbol
MTB110P08KN3
Outline
SOT-23 D
G:Gate S:Source D:Drain
GS
Ordering Information
Device MTB110P08KN3-0-T1-G
Package
SOT-23 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environ...
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