Part Number
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PXFC192207NF |
Manufacturer
|
Infineon |
Description
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Thermally-Enhanced High Power RF LDMOS FET |
Published
|
Feb 19, 2016 |
Detailed Description
|
PXFC192207NF
Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz
Description
The PXFC192207NF is a...
|
Datasheet
|
PXFC192207NF
|
Overview
PXFC192207NF
Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz
Description
The PXFC192207NF is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band.
Features include input and output matching, high gain and a thermally-enhanced plastic package.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Gain (dB) Efficiency (%)
Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA, VGS = 2.
75 V,
ƒ = 1875 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.
84 MHz 21
56
20 Gain
48
19 40
18 32
17 24
16 ...
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