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PXFC192207FH

Infineon
Part Number PXFC192207FH
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Published Feb 19, 2016
Detailed Description PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207FH is a...
Datasheet PDF File PXFC192207FH PDF File

PXFC192207FH
PXFC192207FH

Overview
PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band.
Features include input and output matching, high gain and thermally-enhanced package with earless flanges.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V,IDQ = 1600 mA, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.
84 MHz 30 1930 MHz 25 1960 MHz 1990 MHz 20 Gain 15 60 50 40 30...


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