DatasheetsPDF.com

PXFC192207SH

Infineon
Part Number PXFC192207SH
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Published Feb 19, 2016
Detailed Description PXFC192207SH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207SH is a...
Datasheet PDF File PXFC192207SH PDF File

PXFC192207SH
PXFC192207SH

Overview
PXFC192207SH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207SH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band.
Features include input and output matching, high gain and thermally-enhanced package with earless flanges.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXFC192207SH Package H-37288G-4/2 Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA, VGS = 2.
75 V, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.
84 MHz...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)