2SK1315(L)(S), 2SK1316(L)(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching
regulator, DC-DC converter and motor driver
Outline
LDPAK
4
4
123 D
12 3
G S
1.
Gate 2.
Drain 3.
Source 4.
Drain
2SK1315(L)(S), 2SK1316(L)(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1315
2SK1316
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C
Symbol VDSS
VGSS ID...