INCHANGE Semiconductor
isc Silicon
PNP Power
Transistor
isc Product Specification 2SB679
DESCRIPTION ·High Power Dissipation-
: PC= 100W(Max.
)@TC=25℃ ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.
) ·Complement to Type 2SC1079
APPLICATIONS ·Designed for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage
IC Collector Current-Continuous IE Emitter Current-Continuous
Collector Power Dissipation PC @TC=25℃ Tj Junction Temperature Tstg Storage Temperature
-120
V
-5 V
-12 A
12 A
100 W 150 ℃
-65~150 ℃
isc Website：www.
iscsemi.
cn
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