Part Number
|
STH315N10F7-6 |
Manufacturer
|
STMicroelectronics |
Description
|
N-channel Power MOSFET |
Published
|
Mar 17, 2016 |
Detailed Description
|
STH315N10F7-2, STH315N10F7-6
Datasheet
Automotive-grade N-channel 100 V, 2.1 mΩ typ., 180 A STripFET F7 Power MOSFETs in...
|
Datasheet
|
STH315N10F7-6
|
Overview
STH315N10F7-2, STH315N10F7-6
Datasheet
Automotive-grade N-channel 100 V, 2.
1 mΩ typ.
, 180 A STripFET F7 Power MOSFETs in an H²PAK‑2 and H²PAK‑6 packages
TAB 23 1
H2 PAK-2
TAB
7 1 H2 PAK-6
D(TAB)
D(TAB)
Features
Order code STH315N10F7-2 STH315N10F7-6
VDS 100 V
RDS(on) max.
2.
3 mΩ
• AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness
ID 180 A
G(1)
S(2, 3) for
H2PAK-2
G(1)
S(2, 3, 4, 5, 6, 7) for
H 2PAK-6
N-CHG1DTABS23_2_6
Applications
• Switching applications
Description
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that ...
Similar Datasheet