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STH315N10F7-6

STMicroelectronics
Part Number STH315N10F7-6
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Mar 17, 2016
Detailed Description STH315N10F7-2, STH315N10F7-6 Datasheet Automotive-grade N-channel 100 V, 2.1 mΩ typ., 180 A STripFET F7 Power MOSFETs in...
Datasheet PDF File STH315N10F7-6 PDF File

STH315N10F7-6
STH315N10F7-6

Overview
STH315N10F7-2, STH315N10F7-6 Datasheet Automotive-grade N-channel 100 V, 2.
1 mΩ typ.
, 180 A STripFET F7 Power MOSFETs in an H²PAK‑2 and H²PAK‑6 packages TAB 23 1 H2 PAK-2 TAB 7 1 H2 PAK-6 D(TAB) D(TAB) Features Order code STH315N10F7-2 STH315N10F7-6 VDS 100 V RDS(on) max.
2.
3 mΩ • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 180 A G(1) S(2, 3) for H2PAK-2 G(1) S(2, 3, 4, 5, 6, 7) for H 2PAK-6 N-CHG1DTABS23_2_6 Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that ...


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