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STH315N10F7-2

STMicroelectronics
Part Number STH315N10F7-2
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Mar 17, 2016
Detailed Description STH315N10F7-2, STH315N10F7-6 Datasheet Automotive-grade N-channel 100 V, 2.1 mΩ typ., 180 A STripFET F7 Power MOSFETs in...
Datasheet PDF File STH315N10F7-2 PDF File

STH315N10F7-2
STH315N10F7-2

Overview
STH315N10F7-2, STH315N10F7-6 Datasheet Automotive-grade N-channel 100 V, 2.
1 mΩ typ.
, 180 A STripFET F7 Power MOSFETs in an H²PAK‑2 and H²PAK‑6 packages TAB 23 1 H2 PAK-2 TAB 7 1 H2 PAK-6 D(TAB) D(TAB) Features Order code STH315N10F7-2 STH315N10F7-6 VDS 100 V RDS(on) max.
2.
3 mΩ • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 180 A G(1) S(2, 3) for H2PAK-2 G(1) S(2, 3, 4, 5, 6, 7) for H 2PAK-6 N-CHG1DTABS23_2_6 Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Product status STH315N10F7-2 STH315N10F7-6 Product summary Order code STH315N10F7-2 Marking 315N10F7 Package H²PAK-2 Packing Tape and reel Order code STH315N10F7-6 Marking 315N10F7 Package H²PAK-6 Packing Tape and reel DS9870 - Rev 5 - May 2021 For further information contact your local STMicroelectronics sales office.
www.
st.
com STH315N10F7-2, STH315N10F7-6 Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25 °C ID (1) Drain current (continuous) at Tc = 100 °C IDM (2) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C Derating factor EAS (3) Single pulse avalanche energy Tj Operating junction temperature range Tstg Storage temperature range 1.
Current limited by package.
2.
Pulse width limited by safe operating area.
3.
Starting Tj=25 °C, ID=60 A, VDD=50 V Table 2.
Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJB (1) Thermal resistance, junction-to-board 1.
When mounted on 1 inch² FR-4, 2 Oz copper board.
Value 100 ±20 1...


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