S6306
SiC
Schottky Barrier Diode Bare Die
VR 1200V IF 15A*1 QC 51nC
lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lInner circuit
(C)
(A)
Data Sheet
(C) Cathode (A) Anode
lConstruction Silicon carbide epitaxial planer type
Schottky diode
lAbsolute maximum ratings (Tj = 25°C) Parameter
Symbol
Value
Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current Junction temperature
VRM 1200
VR 1200
IF 15*1
65*2
IFSM
240*3
49*4
IFRM
63*5
Tj 175
Range of storage temperature
Tstg
-55 to +175
*1 Limited by Tj *2 PW=8.
3ms sinusoidal, Tj=...