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S6307

ROHM
Part Number S6307
Manufacturer ROHM
Description SiC Schottky Barrier Diode
Published Apr 1, 2018
Detailed Description S6307 SiC Schottky Barrier Diode VR 1200V IF 30A*1 QC 82nC Features 1) Shorter recovery time 2) Reduced temperature de...
Datasheet PDF File S6307 PDF File

S6307
S6307

Overview
S6307 SiC Schottky Barrier Diode VR 1200V IF 30A*1 QC 82nC Features 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible Inner Circuit Construction Silicon carbide epitaxial planar type Schottky diode Datasheet Absolute Maximum Ratings (Tj = 25°C ) Parameter Symbol Value Reverse voltage (repetitive peak) VRM 1200 Reverse voltage (DC) VR 1200 Continuous forward current IF 30 Surge nonrepetitive forward current i2t value PW=10ms sinusoidal, Tj=25°C PW=10ms sinusoidal, Tj=150°C PW=10s square, Tj=25°C 1≦PW≦10ms, Tj=25°C 1≦PW≦10ms, Tj=150°C IFSM *2 ∫i2d*t2 190 140 780 195 109 Junction temperature Tj 175 Range of storage temperature Tstg 55 to 175 *1 Limited by Tj *2 Assumes Zth(j-a) of 0.
36 °C/W or less.
(Pulse Width = 8.
3ms) Unit V V A A A A A2s A2s °C °C www.
rohm.
com © 2017 ROHM Co.
, Ltd.
All rights reserved.
1/4 2017.
12 - Rev.
A S6307 Datasheet Electrical characteristics (Tj = 2...


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