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S6304

Rohm
Part Number S6304
Manufacturer Rohm
Description SiC Schottky Barrier Diode Bare Die
Published Mar 19, 2016
Detailed Description S6304 SiC Schottky Barrier Diode Bare Die VR 1200V IF 20A*1 QC 65nC lFeatures 1) Shorter recovery time 2) Reduced tempe...
Datasheet PDF File S6304 PDF File

S6304
S6304



Overview
S6304 SiC Schottky Barrier Diode Bare Die VR 1200V IF 20A*1 QC 65nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) Data Sheet (C) Cathode (A) Anode lConstruction Silicon carbide epitaxial planer type Schottky diode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 1200 VR 1200 IF 20*1 82*2 IFSM 310*3 62*4 IFRM 77*5 Tj 175 Range of storage temperature Tstg -55 to +175 *1 Limited by Tj *2 PW=8.
3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C *4 PW=8.
3ms sinusoidal, Tj=150°C *5 Duty cycle=10%, limited by Tj Unit V V A A A A A °C °C www.
rohm.
com © 2014 ROHM Co.
, Ltd.
All rights reserved.
1/3 2014.
05 - Rev.
A S6304 Data Sheet lElectrical characteristics (Tj = 25°C) Parameter Symbol Conditions Values Min.
Typ.
Max.
DC blocking voltage VDC IR =0.
4mA 1200 - - IF=20A,Tj=25°C - 1.
4 1.
6 Forward voltage VF IF=20A,Tj=150°C - 1.
8 - IF=20A,Tj=175°C - 1.
9 - VR=1200V,Tj=25°C - 20 400 Reverse current IR VR=1200V,Tj=150°C - 160 - VR=1200V,Tj=175°C - 260 - Total capacitance VR=1V,f=1MHz C VR=800V,f=1MHz - 1060 - 85 - Total capacitive charge Qc VR=800V,di/dt=500A/ms - 65 - Switching time tc VR=800V,di/dt=500A/ms - 18 - Unit V V V V mA mA mA pF pF nC ns www.
rohm.
com © 2014 ROHM Co.
, Ltd.
All rights reserved.
2/3 2014.
05 - Rev.
A S6304 lElectrical characteristic curves Data Sheet Forward Current : IF [A] Fig.
1 VF - IF Characteristics 100 Pulsed 10 Ta=175ºC 1 Ta=125ºC Ta=75ºC 0.
1 0.
01 Ta=25ºC Ta= -25ºC 0.
001 0.
0 0.
5 1.
0 1.
5 2.
0 2.
5 Forward Voltage : VF [V] Forward Current : IF [A] Fig.
2 VF - IF Characteristics 30 Pulsed Ta= -25ºC 25 Ta=25ºC 20 Ta=75ºC Ta=125ºC 15 Ta=175ºC 10  5 0 0.
0 0.
5 1.
0 1.
5 2.
0 2.
5 Forward Voltage : VF [V] Reverse Current : IR [mA] Fig.
...



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