SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES Low Forward Voltage : VF(2)=0.
23V (Typ.
) Small Package : ESC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage
VRM VR
15 10
Maximum (Peak) Forward Current
IFM 200
Average Forward Current
IO 100
Surge Current (10ms)
IFSM
1
Power Dissipation
PD 150*
Junction Temperature
Tj 125
Storage Temperature Range
Tstg -55 125
* : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm.
UNIT V V mA mA A mW
CATHODE MARK B A
GG
KDR367E
SCHOTTKY BARRIER TYPE DIODE
C 1
2 D
1.
ANODE 2.
CATHODE
E
F
DIM A B C D E F G
MILLIMETERS 1.
60 +_0.
10 1.
20 ...