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KDR367

KEC
Part Number KDR367
Manufacturer KEC
Description DIODE
Published Jun 19, 2023
Detailed Description SEMICONDUCTOR TECHNICAL DATA LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES Low Forward Voltage : VF(2)=0.23V (Typ.) Small P...
Datasheet PDF File KDR367 PDF File

KDR367
KDR367

Overview
SEMICONDUCTOR TECHNICAL DATA LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES Low Forward Voltage : VF(2)=0.
23V (Typ.
) Small Package : USC.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage VRM 15 Reverse Voltage VR 10 Maximum (Peak) Forward Current IFM 200 Average Forward Current IO 100 Surge Current (10ms) IFSM 1 Power Dissipation PD 200* Junction Temperature Tj 125 Storage Temperature Range Tstg -55 125 * : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm.
UNIT V V mA mA A mW CATHODE MARK E A K F L KDR367 SCHOTTKY BARRIER TYPE DIODE B G 1 H 2 D M M 1.
ANODE 2.
CATHODE J C I DIM MILLIMETERS A 2.
...


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