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KDR367E

KEC
Part Number KDR367E
Manufacturer KEC
Description SCHOTTKY BARRIER TYPE DIODE
Published Mar 21, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES Low Forward Voltage : VF(2)=0.23V (Typ.) Small P...
Datasheet PDF File KDR367E PDF File

KDR367E
KDR367E

Overview
SEMICONDUCTOR TECHNICAL DATA LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES Low Forward Voltage : VF(2)=0.
23V (Typ.
) Small Package : ESC.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage VRM VR 15 10 Maximum (Peak) Forward Current IFM 200 Average Forward Current IO 100 Surge Current (10ms) IFSM 1 Power Dissipation PD 150* Junction Temperature Tj 125 Storage Temperature Range Tstg -55 125 * : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm.
UNIT V V mA mA A mW CATHODE MARK B A GG KDR367E SCHOTTKY BARRIER TYPE DIODE C 1 2 D 1.
ANODE 2.
CATHODE E F DIM A B C D E F G MILLIMETERS 1.
60 +_0.
10 1.
20 ...


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