Power
Transistors
2SC2590
Silicon
NPN epitaxial planar type
For low-frequency power amplification
8.
0+–00.
.
15
Unit: mm
3.
2±0.
2
■ Features
φ 3.
16±0.
1
3.
8±0.
3 11.
0±0.
5
• Excellent collector current IC characteristics of forward current
3.
05±0.
1
transfer ratio hFE
• High transition frequency fT • TO-126B package which requires no insulation plate for installa-
tion to the heat sink
1.
9±0.
1 16.
0±1.
0
/ ■ Absolute Maximum Ratings Ta = 25°C
e Parameter
Symbol Rating
Unit
c type) Collector-base voltage (Emitter open) VCBO
120
V
n d ge.
ed Collector-emitter voltage (Base open) VCEO
120
V
le sta ntinu Emitter-base voltage (Collector open) VEBO
5
V
a e cyc isco Collector curren...