Part Number
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HFD2N90 |
Manufacturer
|
SemiHow |
Description
|
N-Channel MOSFET |
Published
|
Mar 26, 2016 |
Detailed Description
|
HFD2N90_HFU2N90
Feb 2014
HFD2N90/HFU2N90
900V N-Channel MOSFET
BVDSS = 900 V RDS(on) typ ȍ ID = 2.0 A
FEATURES...
|
Datasheet
|
HFD2N90
|
Overview
HFD2N90_HFU2N90
Feb 2014
HFD2N90/HFU2N90
900V N-Channel MOSFET
BVDSS = 900 V RDS(on) typ ȍ ID = 2.
0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested
D-PAK I-PAK
2
1 3
HFD2N90
1 2 3
HFU2N90
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = ...
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