Part Number
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K4174 |
Manufacturer
|
Panasonic |
Description
|
Silicon N-channel enhancement MOS FET |
Published
|
Mar 27, 2016 |
Detailed Description
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Datasheet
|
K4174
|
Overview
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Power MOS FETs
This product complies with the RoHS Directive (EU 2002/95/EC).
2SK4174
Silicon N-channel enhancement MOS FET
For high speed switching circuits
Features
Gate-source surrender voltage VGSS : ±25 V guaranteed Avalanche energy capability guaranteed: EAS 216 mJ High-speed switching: tf = 90 ns (typ.
)
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage Gate-source surrend...
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