ACE2600B
Dual N-Channel Enhancement Mode Field Effect
Transistor with ESD Protection
Description The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a load switch.
It is ESD protected.
Features
VDS(V)=20V ID=6A (VGS=4.
5V) RDS(ON)<22mΩ (VGS=4.
5V) RDS(ON)<26mΩ (VGS=2.
5V) RDS(ON)<34mΩ (VGS=1.
8V) ESD Protected: 2000V
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) * AC TA=25 OC
TA=70 OC
VDSS VGSS
ID
20 V ±8 V 6 4.
8 A
Drain Current (Pulse) * B
IDM 30
Power Dissipation
TA=25 OC TA=70 ...