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ACE2600B

ACE Technology
Part Number ACE2600B
Manufacturer ACE Technology
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Published Apr 1, 2016
Detailed Description ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Description The ACE2600B uses advan...
Datasheet PDF File ACE2600B PDF File

ACE2600B
ACE2600B

Overview
ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Description The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a load switch.
It is ESD protected.
Features  VDS(V)=20V  ID=6A (VGS=4.
5V)  RDS(ON)＜22mΩ (VGS=4.
5V)  RDS(ON)＜26mΩ (VGS=2.
5V)  RDS(ON)＜34mΩ (VGS=1.
8V)  ESD Protected: 2000V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) * AC TA=25 OC TA=70 OC VDSS VGSS ID 20 V ±8 V 6 4.
8 A Drain Current (Pulse) * B IDM 30 Power Dissipation TA=25 OC TA=70 ...


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