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ACE2607B

Part Number	ACE2607B
Manufacturer	ACE Technology
Description	P-Channel Enhancement Mode Field Effect Transistor
Published	Apr 1, 2016
Detailed Description	ACE2607B P-Channel Enhancement Mode Field Effect Transistor Description ACE2607B is produced with high cell density, DMO...
Datasheet	ACE2607B PDF File

Overview

ACE2607B P-Channel Enhancement Mode Field Effect Transistor Description ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.
This device particularly suits for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features  VDS(V)=-30V, ID=-3.
5A  RDS(ON)=52mΩ@VGS=-10V  RDS(ON)=68mΩ@VGS=-4.
5V  High density cell design for low RDS(ON) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 1) Cont...

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