ACE2607B
P-Channel Enhancement Mode Field Effect
Transistor
Description ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.
This device particularly suits for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features
VDS(V)=-30V, ID=-3.
5A RDS(ON)=52mΩ@VGS=-10V RDS(ON)=68mΩ@VGS=-4.
5V High density cell design for low RDS(ON)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
-30 V
Gate-Source Voltage
VGSS ±20 V
Drain Current (Note 1) Cont...