RoHS 2SD999
2SD999
TRANSISTOR (
NPN)
FEATURES Power dissipation
DPCM: 0.
5 W (Tamb=25℃)
TCollector current
ICM: 1 A
.
,LCollector-base voltage
V(BR)CBO:
30 V
Operating and storage junction temperature range
OTJ, Tstg: -55℃ to +150℃
SOT-89
1.
BASE
2.
COLLECTOR 3.
EMITTER
1 2 3
CELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
ICCollector-base breakdown voltage
Collector-emitter breakdown voltage
NEmitter-base breakdown voltage OCollector cut-off current REmitter cut-off current TDC current gain CCollector-emitter saturation voltage EBase-emitter saturation voltage LBase-emitter voltage ETransition frequency
Collector output capacitance
Symbol V(BR)CBO V...