Part Number
|
2SK3211 |
Manufacturer
|
Renesas |
Description
|
Silicon N Channel MOS FET |
Published
|
Apr 8, 2016 |
Detailed Description
|
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ...
|
Datasheet
|
2SK3211
|
Overview
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
REJ03G1091-0400 Rev.
4.
00
May 15, 2006
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L))
4
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1))
D
4 G
12 3
123
S
1.
Gate 2.
Drain 3.
Source 4.
Drain
Rev.
4.
00 May 15, 2006 page 1 of 8
2SK3211(L), 2SK3211(S)
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Chan...
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