Part Number
|
HFP10N60U |
Manufacturer
|
SemiHow |
Description
|
N-Channel MOSFET |
Published
|
Apr 18, 2016 |
Detailed Description
|
HFP10N60U
HFP10N60U
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Ro...
|
Datasheet
|
HFP10N60U
|
Overview
HFP10N60U
HFP10N60U
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 0.
67 ȍ7\S#9GS=10V 100% Avalanche Tested
Feb 2013
BVDSS = 600 V RDS(on) typ = 0.
67 ȍ ID = 9.
5 A
TO-220
1 23
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(No...
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