Part Number
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TSM080N03E |
Manufacturer
|
Taiwan Semiconductor |
Description
|
N-Channel Power MOSFET |
Published
|
Apr 23, 2016 |
Detailed Description
|
TSM080N03E
Taiwan Semiconductor
N-Channel Power MOSFET
30V, 55A, 8mΩ
FEATURES ● Fast switching ● 100% EAS Guaranteed ●...
|
Datasheet
|
TSM080N03E
|
Overview
TSM080N03E
Taiwan Semiconductor
N-Channel Power MOSFET
30V, 55A, 8mΩ
FEATURES ● Fast switching ● 100% EAS Guaranteed ● Green Device Available ● G-S ESD Protection Diode Embedded
APPLICATION ● Vcore / MB ● POL Application ● SMPS 2nd SR
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
RDS(on) (max)
VGS = 10V VGS = 4.
5V
Qg
30 8 12.
5 7.
5
V mΩ nC
PDFN56
Notes: Moisture sensitivity level: level 3.
Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2)
TC = 25°C TC = 100°C
VDS VGS
ID
IDM
30 ±20 55 35 220
Total Power Dissipation ...
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