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TSM080N03E

Taiwan Semiconductor
Part Number TSM080N03E
Manufacturer Taiwan Semiconductor
Description N-Channel Power MOSFET
Published Apr 23, 2016
Detailed Description TSM080N03E Taiwan Semiconductor N-Channel Power MOSFET 30V, 55A, 8mΩ FEATURES ● Fast switching ● 100% EAS Guaranteed ●...
Datasheet PDF File TSM080N03E PDF File

TSM080N03E
TSM080N03E

Overview
TSM080N03E Taiwan Semiconductor N-Channel Power MOSFET 30V, 55A, 8mΩ FEATURES ● Fast switching ● 100% EAS Guaranteed ● Green Device Available ● G-S ESD Protection Diode Embedded APPLICATION ● Vcore / MB ● POL Application ● SMPS 2nd SR KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = 10V VGS = 4.
5V Qg 30 8 12.
5 7.
5 V mΩ nC PDFN56 Notes: Moisture sensitivity level: level 3.
Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C VDS VGS ID IDM 30 ±20 55 35 220 Total Power Dissipation @ TC = 25°C Single Pulsed Avalanche Energy (Note 3) Single Pulsed Avalanche Current (Note 3) PDTOT EAS IAS 54 45 30 Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 UNIT V V A A W mJ A °C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resis...


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