RU1H35K

RU1H35K N-Channel Advanced Power MOSFET Features • 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description Applications • High Speed Power Switching GDS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Other...