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RU1H35Q

Ruichips
Part Number RU1H35Q
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 10, 2017
Detailed Description RU1H35Q N-Channel Advanced Power MOSFET MOSFET Features • 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V • Super High Dense Cel...
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RU1H35Q
RU1H35Q

Overview
RU1H35Q N-Channel Advanced Power MOSFET MOSFET Features • 100V/40A, RDS (ON) =21mΩ(Typ.
)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-247 Applications •Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-...


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