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RU1H35K

Ruichips
Part Number RU1H35K
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 25, 2016
Detailed Description RU1H35K N-Channel Advanced Power MOSFET Features • 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V • Super High Dense Cell Desig...
Datasheet PDF File RU1H35K PDF File

RU1H35K
RU1H35K

Overview
RU1H35K N-Channel Advanced Power MOSFET Features • 100V/40A, RDS (ON) =21mΩ(Typ.
)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description Applications • High Speed Power Switching GDS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 100 ±25 175 -55 to 175 40 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 160 A 40 A 30 97 W 48 1.
55 °C/W 100 °C/W 90 mJ...


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