2SC3833
Silicon
NPN Triple Diffused Planar
Transistor (High Voltage and High Speed Switching
Transistor) Application : Switching
Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg
2SC3833 500 400 10
12(Pulse24) 4
100(Tc=25°C) 150
–55 to +150
Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB
Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.
4A IC=7A, IB=1.
4A VCE=12V, IE=–1A VCB=10V, f=1MHz
(Ta=25°C)
2SC3833 100max 100max 400min 10 to 30 0.
5max 1.
3max 10typ 105typ
Unit µA µA V
V V MHz pF
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB...