TN2010T

TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V(BR)DSS Min (V) 200 rDS(on) Max (W) 11 VGS(th) (V) 0.8 to 3.0 ID (A) 0.12 Features D Low On-Resistance: 9.5 W D Secondary Breakdown Free: 220 V D Low Power/Voltage Driven D Low Input and Output Leakage D Excellent Thermal Stability Benefits D Low Offset Voltage D Full-Voltage Operat...