Ordering number:EN6070
NPN Triple Diffused Planar Silicon Transistor
2SC5506
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed.
· High breakdown
voltage (VCBO=1600V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm 2048B
[2SC5506]
20.
0 3.
3 5.
0
26.
0
2.
0 3.
4
2.
0
1.
0
20.
7
0.
6 1.
2
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC
Tc=25˚C
5.
45
5.
45
Conditions...