2SC6078
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6078
○ Power Amplifier Applications ○ Power Switching Applications
• • Low collector saturation
voltage: VCE (sat) = 0.
5 V (max)(IC = 1A) High-speed switching: tstg = 0.
4 μs (typ) Unit: mm
www.
DataSheet4U.
com Absolute
Maximum Ratings (Ta = 25°C)
Characteristic Symbol VCBO VCEX VCEO VEBO DC Pulse IC ICP IB PC Tj Tstg Rating 160 160 80 7 3 5 1.
0 1.
8 150 −55~150 Unit V V V V A A A W °C °C 1 : BASE 2 : COLLECTOR(HEAT SINK) 3 : EMITTER
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
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